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Power semiconductor device
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101	Trim Size: 170mm x 244mm Kimoto c01.tex V2[removed]:53 A.M. 1 Progress in Electronics Add to Reading List Source URL: media.wiley.com Language: English - Date: 2014-10-08 07:18:10 Carbides Semiconductor device fabrication Power electronics Ceramic materials Silicon carbide Gallium nitride Power semiconductor device Wide bandgap semiconductors Semiconductor device Chemistry Matter Semiconductor devices
102	Investigation of SiC Stack and Discrete Cascodes Xueqing Li, Anup Bhalla, Petre Alexandrov, John Hostetler, and Leonid Fursin United Silicon Carbide, Inc., 7 Deer Park Drive, Suite E Monmouth Junction, New Jersey, USA Add to Reading List Source URL: www.unitedsic.com Language: English - Date: 2014-07-01 11:25:21 Electronic engineering Chemistry Cascode MOSFET Transistor Power semiconductor device Field-effect transistor Silicon carbide JFET Technology Semiconductor devices Power electronics
103	T&M, Wireless, Electronic Displays, ICs the news and products journal for the electronics industry www.canadianelectronics.ca ntitled-4 1 Add to Reading List Source URL: www.canadianelectronics.ca Language: English - Date: 2012-05-08 09:16:36 Microtechnology Power cables Electronic design Quad-flat no-leads package Electrical wiring Wire bonding Integrated circuit packaging Wire Reliability Semiconductor device fabrication Technology Electromagnetism
104	PDF Document Add to Reading List Source URL: www.nist.gov Language: English - Date: 2010-12-21 11:00:47 Electronics Electromagnetism Insulated gate bipolar transistor Operations research Electronic design automation Simulation Transistor Power semiconductor device Scientific modelling Power electronics Electronic engineering Semiconductor devices
105	Cool Systems with SiC and GaN 1 Euphoria and benefits to you “A new era begins,” “lowest losses,” Add to Reading List Source URL: www.elektromobilitaet.fraunhofer.de Language: English - Date: 2014-12-06 03:45:59 Electronic engineering Gallium nitride Thyristor Power semiconductor device AC/AC converter Electromagnetism Electronics Power electronics
106	DEVELOPMENT OF (Al)GaN RECESS ETCH FOR EMODE POWER HEMTs G. MANNAERT, V. PARASCHIV, B. DE JAEGER, M. VAN HOVE, M. DEMAND, S. DECOUTERE, W. BOULLART IMEC, KAPELDREEF 75, LEUVEN, B-3000, BELGIUM © IMEC[removed]CONFIDENTIA Add to Reading List Source URL: www-leti.cea.fr Language: English - Date: 2012-05-24 09:13:54 Gallium nitride IMEC Ohmic contact Aluminium gallium nitride Light-emitting diode Gan Chinese BCL3 Sulfur hexafluoride Chemistry Nitrides Semiconductor device fabrication
107	DEVELOPMENT OF (Al)GaN RECESS ETCH FOR EMODE POWER HEMTs G. MANNAERT, V. PARASCHIV, B. DE JAEGER, M. VAN HOVE, M. DEMAND, S. DECOUTERE, W. BOULLART IMEC, KAPELDREEF 75, LEUVEN, B-3000, BELGIUM © IMEC[removed]CONFIDENTIA Add to Reading List Source URL: www-leti.cea.fr Language: English - Date: 2012-05-24 09:13:54 Gallium nitride IMEC Ohmic contact Aluminium gallium nitride Light-emitting diode Gan Chinese BCL3 Sulfur hexafluoride Chemistry Nitrides Semiconductor device fabrication
108	International Foundation HFSJG Activity Report 2002 Name of research institute or organization: ABB Switzerland Ltd, Semiconductors Add to Reading List Source URL: www.ifjungo.ch Language: English - Date: 2014-03-27 09:52:19 Semiconductor devices Power electronics Power semiconductor device Insulated gate bipolar transistor Diode Transistor Gallium nitride Failure rate Thyristor Electrical engineering Electromagnetism Electronics
109	Microsoft Word - 132_ABB_f.doc Add to Reading List Source URL: www.ifjungo.ch Language: English - Date: 2014-03-27 09:52:13 Electronics Power electronics Power semiconductor device Diode Insulated gate bipolar transistor Transistor Gallium nitride Thyristor Leakage Semiconductor devices Electrical engineering Electromagnetism
110	The failure rates due due cosmic rays of biased high power semiconductors devices should be smaller than one failure per 109 hours and per cm2 silicon area (=1 FIT/cm2) Add to Reading List Source URL: www.ifjungo.ch Language: English - Date: 2014-03-27 09:52:37 Radiation Neutron facilities Baryons Neutron Cosmic ray Power semiconductor device Diode Insulated gate bipolar transistor Paul Scherrer Institute Physics Power electronics Nuclear technology

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